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NXP Semiconductors
PESD12VS1ULD
Unidirectional ESD protection diode
7. Application information
The PESD12VS1ULD is designed for the protection of one unidirectional data or signal
line from the damage caused by ESD and surge pulses. The device may be used on lines
where the signal polarities are either positive or negative with respect to ground. The
PESD12VS1ULD provides a surge capability of 150 W per line for an 8/20 μ s waveform.
line to be protected
(positive signal polarity)
PESD12VS1ULD
GND
line to be protected
(negative signal polarity)
PESD12VS1ULD
GND
unidirectional protection of one line
006aac532
Fig 9.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESD12VS1ULD as close to the input terminal or connector as possible.
2. The path length between the PESD12VS1ULD and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is
suitable for use in automotive applications.
PESD12VS1ULD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 May 2011
? NXP B.V. 2011. All rights reserved.
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相关代理商/技术参数
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PESD12VS2UAT 制造商:NXP Semiconductors 功能描述:DIODE TVS DUAL SOT-23 制造商:NXP Semiconductors 功能描述:DIODE, TVS, DUAL, SOT-23
PESD12VS2UAT T/R 功能描述:TVS二极管阵列 12V DUAL ESD PROTECT RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
PESD12VS2UAT,215 功能描述:TVS二极管阵列 12V DUAL ESD PROTECT RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
PESD12VS2UAT215 制造商:NXP Semiconductors 功能描述:ESD DIODE 35V Dual Common Cathode SOT
PESD12VS2UQ 制造商:NXP Semiconductors 功能描述:DIODE TVS DUAL SOT-663 制造商:NXP Semiconductors 功能描述:DIODE, TVS, DUAL, SOT-663
PESD12VS2UQ T/R 功能描述:TVS二极管阵列 DIODE ARRAY ESD TAPE-7 RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
PESD12VS2UQ,115 功能描述:TVS二极管阵列 DIODE ARRAY ESD RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C